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| BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD744 Series 90 W at 25C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD743 Collector-base voltage (IE = 0) BD743A BD743B BD743C BD743 Collector-emitter voltage (IB = 0) BD743A BD743B BD743C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot 1/2LIC2 TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 50 70 90 110 45 60 80 100 5 15 20 5 90 2 90 -65 to +150 -65 to +150 -65 to +150 250 V A A A W W mJ C C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.72 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD743 V(BR)CEO IC = 30 mA IB = 0 (see Note 5) BD743A BD743B BD743C VCE = 50 V VCE = 70 V VCE = 90 V ICBO Collector cut-off current VCE = 110 V VCE = 50 V VCE = 70 V VCE = 90 V VCE = 110 V ICEO IEBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 30 V VCE = 60 V VEB = VCE = VCE = VCE = IB = IB = VCE = VCE = 5V 4V 4V 4V 0.5 A 5A 4V 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 1 A IC = 5 A IC = 15 A IC = 5 A IC = 15 A IC = 5 A IC = 15 A IC = 1 A IC = 1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 5 (see Notes 5 and 6) 40 20 5 1 3 1 3 V V 150 TC = 125C TC = 125C TC = 125C TC = 125C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743/743A BD743B/743C MIN 45 60 80 100 0.1 0.1 0.1 0.1 5 5 5 5 0.1 0.1 0.5 mA mA mA V TYP MAX UNIT hFE VCE(sat) VBE hfe VCE = 10 V VCE = 10 V |hfe | NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.4 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER td tr ts tf TEST CONDITIONS IC = 5 A VBE(off) = -4.2 V IB(on) = 0.5 A RL = 6 MIN IB(off) = -0.5 A tp = 20 s, dc 2% TYP 20 350 500 400 MAX UNIT ns ns ns ns Delay time Rise time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 TCS637AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10 IC = 10 IB tp = 300s, duty cycle < 2% TCS637AB TC = 125C TC = 25C TC = -55C hFE - DC Current Gain 1*0 0*1 VCE = 4 V tp = 300 s, duty cycle < 2% 10 0*1 1*0 10 100 TC = -55C TC = 25C TC = 125C 0*01 0*1 1*0 10 100 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 10 VCE = 4 V tp = 300s, duty cycle < 2% VBE - Base-Emitter Voltage - V TCS637AC 1*0 TC = -55C TC = 25C TC = 125C 0*1 0*1 1*0 10 100 IC - Collector Current - A Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS637AA IC - Collector Current - A 10 tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation 1*0 0*1 BD743 BD743A BD743B BD743C 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS637AA Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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